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Preliminary Technical Information
TrenchMV TM
Power MOSFET
IXTA160N10T
IXTP160N10T
V DSS
I D25
R DS(on)
= 100 V
= 160 A
≤ 7.0 m Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)
Symbol
Test Conditions
Maximum Ratings
G
S
(TAB)
V DSS
V DGR
V GSM
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M Ω
Transient
100
100
± 30
V
V
V
TO-220 (IXTP)
D
I D25
I LRMS
I DM
I AR
E AS
dv/dt
T C = 25 ° C
Lead Current Limit, RMS
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
160
75
430
25
500
3
A
A
A
A
mJ
V/ns
G
S
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
T J ≤ 175 ° C, R G = 5 Ω
Features
P D
T J
T JM
T stg
T C = 25 ° C
430
-55 ... +175
175
-55 ... +175
W
° C
° C
° C
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
T L
T SOLD
M d
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
300 ° C
260 ° C
1.13 / 10 Nm/lb.in.
175 ° C Operating Temperature
Advantages
Easy to mount
Weight
TO-220
TO-263
3
2.5
g
g
Space savings
High power density
Applications
Automotive
- Motor Drives
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
BV DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0 V, I D = 250 μ A
V DS = V GS , I D = 250 μ A
V GS = ± 20 V, V DS = 0 V
V DS = V DSS
V GS = 0 V T J = 150 ° C
V GS = 10 V, I D = 25 A, Notes 1, 2
100
2.5
6.1
4.5
± 200
5
250
7.0
V
V
nA
μ A
μ A
m Ω
Primary Switch for 24V and 48V
Systems
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Current Switching
Applications
High Voltage Synchronous Recifier
DS99650 (11/06)
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